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LY6125616ML-10 Datasheet(PDF) 2 Page - Lyontek Inc. |
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LY6125616ML-10 Datasheet(HTML) 2 Page - Lyontek Inc. |
2 / 14 page LY6125616 Rev. 2.4 5V 256K X 16 BIT HIGH SPEED CMOS SRAM Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 1 ® FEATURES Fast access time : 10/15/20/25ns Low power consumption: Operating current : 215/140/110/100mA(MAX.) Standby current : 15mA(MAX. for 10ns) 3mA(MAX. for 15/20/25ns) 100µA( (MAX. for 15/20/25ns LL version) Single 5V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage : 2.0V (MIN.) Green package available Package : 44-pin 400 mil TSOP-II 48-ball 6mm x 8mm TFBGA GENERAL DESCRIPTION The LY6125616 is a 4,194,304-bit low power CMOS static random access memory organized as 262,144 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6125616 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The LY6125616 operates from a single power supply of 5V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Product Family Operating Temperature Vcc Range Speed Power Dissipation Standby(ISB1) Operating(Icc) LY6125616 0 ~ 70℃ 4.5 ~ 5.5V 10ns 15mA(MAX.) 215mA(MAX.) LY6125616(I) -40 ~ 85℃ 4.5 ~ 5.5V 10ns 15mA(MAX.) 215mA(MAX.) LY6125616 0 ~ 70℃ 4.5 ~ 5.5V 15/20/25ns 3mA(MAX.) 140/110/100mA(MAX.) LY6125616(E) -20 ~ 80℃ 4.5 ~ 5.5V 15/20/25ns 3mA(MAX.) 140/110/100mA(MAX.) LY6125616(I) -40 ~ 85℃ 4.5 ~ 5.5V 15/20/25ns 3mA(MAX.) 140/110/100mA(MAX.) LY6125616(LL) 0 ~ 70℃ 4.5 ~ 5.5V 15/20/25ns 100µA(MAX.) 140/110/100mA(MAX.) LY6125616(LLI) -40 ~ 85℃ 4.5 ~ 5.5V 15/20/25ns 100µA(MAX.) 140/110/100mA(MAX.) |
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