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LY615128ML-10IT Datasheet(PDF) 4 Page - Lyontek Inc. |
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LY615128ML-10IT Datasheet(HTML) 4 Page - Lyontek Inc. |
4 / 11 page LY615128 Rev. 1.3 5V 512K X 8 BIT HIGH SPEED CMOS SRAM Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 3 ® TRUTH TABLE MODE CE# OE# WE# I/O OPERATION SUPPLY CURRENT Standby H X X High-Z ISB,ISB1 Output Disable L H H High-Z ICC Read L L H DOUT ICC Write L X L DIN ICC Note: H = VIH, L = VIL, X = Don't care. DC ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITION MIN. TYP. *4 MAX. UNIT Supply Voltage VCC 4.5 5.0 5.5 V Input High Voltage VIH *1 2.2 - VCC+0.3 V Input Low Voltage VIL *2 - 0.3 - 0.6 V Input Leakage Current ILI VCC ≧ VIN ≧ VSS - 1 - 1 µA Output Leakage Current ILO VCC ≧ VOUT ≧ VSS, Output Disabled - 1 - 1 µA Output High Voltage VOH IOH = -4mA 2.4 - - V Output Low Voltage VOL IOL = 8mA - - 0.4 V Average Operating Power supply Current ICC Cycle time = Min. CE# = VIL , II/O = 0mA Others at VIL or VIH -10 - 220 280 mA -12 - 200 250 mA -15 - 180 220 mA Standby Power Supply Current ISB CE# = VIH, others at VIL or VIH -5 50 mA ISB1 CE# V ≧ CC - 0.2V Others at 0.2V or VCC - 0.2V - 1 10* 5 mA Notes: 1. VIH(max) = VCC + 3.0V for pulse width less than 10ns. 2. VIL(min) = VSS - 3.0V for pulse width less than 10ns. 3. Over/Undershoot specifications are characterized, not 100% tested. 4. Typical values are included for reference only and are not guaranteed or tested. Typical valued are measured at VCC = VCC(TYP.) and TA = 25℃ 5. 1mA for special request CAPACITANCE (TA = 25 , f ℃ = 1.0MHz) PARAMETER SYMBOL MIN. MAX UNIT Input Capacitance CIN - 8 pF Input/Output Capacitance CI/O - 10 pF Note : These parameters are guaranteed by device characterization, but not production tested. |
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