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LY615128ML-10ET Datasheet(PDF) 2 Page - Lyontek Inc. |
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LY615128ML-10ET Datasheet(HTML) 2 Page - Lyontek Inc. |
2 / 11 page LY615128 Rev. 1.3 5V 512K X 8 BIT HIGH SPEED CMOS SRAM Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 1 ® FEATURES Fast access time : 10/12/15ns Low power consumption: Operating current: 200/180/150mA (TYP.) Standby current: 1mA (TYP.) Single 5V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data retention voltage : 2.0V (MIN.) Green package available Package : 44-pin 400 mil TSOP-II GENERAL DESCRIPTION The LY615128 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY615128 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The LY615128 operates from a single power supply of 5V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Product Family Operating Temperature Vcc Range Speed Power Dissipation Standby(ISB1,TYP.) Operating(Icc,TYP.) LY615128 0 ~ 70℃ 4.5 ~ 5.5V 10/12/15 ns 1mA 200/180/150mA LY615128(E) -20 ~ 80℃ 4.5 ~ 5.5V 10/12/15 ns 1mA 200/180/150mA LY615128(I) -45 ~ 85℃ 4.5 ~ 5.5V 10/12/15 ns 1mA 200/180/150mA FUNCTIONAL BLOCK DIAGRAM DECODER I/O DATA CIRCUIT CONTROL CIRCUIT 512Kx8 MEMORY ARRAY COLUMN I/O A0-A18 Vcc Vss DQ0-DQ7 CE# WE# OE# PIN DESCRIPTION SYMBOL DESCRIPTION A0 - A18 Address Inputs DQ0 – DQ7 Data Inputs/Outputs CE# Chip Enable Inputs WE# Write Enable Input OE# Output Enable Input VCC Power Supply VSS Ground NC No Connection |
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