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FDMS36101L_F085 Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. FDMS36101L_F085
Description  N-Channel Power Trench MOSFET 100V, 38A, 26m
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDMS36101L_F085 Datasheet(HTML) 2 Page - Fairchild Semiconductor

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FDMS36101L_F085 Rev. C1
www.fairchildsemi.com
2
Electrical Characteristics T
J = 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V
100
-
-
V
IDSS
Drain to Source Leakage Current
VDS=100V,
TJ = 25oC
-
-
1
μA
VGS = 0V
TJ = 175oC(Note 4)
-
-
1
mA
IGSS
Gate to Source Leakage Current
VGS = ±20V
-
-
±100
nA
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250μA
1.0
1.84
3.0
V
rDS(on)
Drain to Source On Resistance
ID = 20A,
VGS= 10V
TJ = 25oC
-
18
26
m
Ω
TJ = 175oC(Note 4)
-
45
65
m
Ω
ID = 20A,
VGS= 4.5V
TJ = 25oC
-
20
28
m
Ω
TJ = 175oC(Note 4)
-
47
66
m
Ω
Ciss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1MHz
-
3945
-
pF
Coss
Output Capacitance
-
229
-
pF
Crss
Reverse Transfer Capacitance
-
111
-
pF
Rg
Gate Resistance
f = 1MHz
-
1.2
-
Ω
Qg(ToT)
Total Gate Charge at 10V
VGS = 0 to 10V
VDD = 50V
ID = 20A
-70
84
nC
Qg(th)
Threshold Gate Charge
VGS = 0 to 2V
-
6.8
9
nC
Qgs
Gate to Source Gate Charge
-
10.5
-
nC
Qgd
Gate to Drain “Miller“ Charge
-
12
-
nC
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
ton
Turn-On Time
VDD = 50V, ID = 20A,
VGS = 10V, RGEN = 6Ω
-
-
24
ns
td(on)
Turn-On Delay Time
-
15
-
ns
tr
Rise Time
-
7
-
ns
td(off)
Turn-Off Delay Time
-
45
-
ns
tf
Fall Time
-
3
-
ns
toff
Turn-Off Time
-
-
57
ns
VSD
Source to Drain Diode Voltage
ISD = 20A, VGS = 0V
-
-
1.25
V
ISD = 10A, VGS = 0V
-
-
1.2
V
Trr
Reverse Recovery Time
IF = 20A, dISD/dt = 100A/μs,
VDD=80V
-43
47
ns
Qrr
Reverse Recovery Charge
-
71
85
nC


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