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FDMS36101L_F085 Datasheet(PDF) 4 Page - Fairchild Semiconductor

Part No. FDMS36101L_F085
Description  N-Channel Power Trench MOSFET 100V, 38A, 26m
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDMS36101L_F085 Datasheet(HTML) 4 Page - Fairchild Semiconductor

  FDMS36101L_F085 Datasheet HTML 1Page - Fairchild Semiconductor FDMS36101L_F085 Datasheet HTML 2Page - Fairchild Semiconductor FDMS36101L_F085 Datasheet HTML 3Page - Fairchild Semiconductor FDMS36101L_F085 Datasheet HTML 4Page - Fairchild Semiconductor FDMS36101L_F085 Datasheet HTML 5Page - Fairchild Semiconductor FDMS36101L_F085 Datasheet HTML 6Page - Fairchild Semiconductor  
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FDMS36101L_F085 Rev. C1
www.fairchildsemi.com
4
Figure 5.
110
100
0.1
1
10
100
1000
100us
1ms
10ms
VDS, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
100ms
Forward Bias Safe Operating Area
0.001
0.01
0.1
1
10
100
1
10
100
200
STARTING TJ = 150oC
STARTING TJ = 25oC
tAV, TIME IN AVALANCHE (ms)
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R = 0
If R
≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7.
1
2
345
0
25
50
75
100
TJ = -55oC
TJ = 25oC
TJ = 175oC
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VDD = 5V
VGS, GATE TO SOURCE VOLTAGE (V)
Transfer Characteristics
Figure 8.
0.00.2
0.40.60.81.0
1.2
0.01
0.1
1
10
100
TJ = 25 oC
TJ = 175 oC
VGS = 0 V
VSD, BODY DIODE FORWARD VOLTAGE (V)
Forward Diode Characteristics
Figure 9.
012
345
0
20
40
60
80
100
VGS
10V Top
8V
6V
5V
4.5V
4V Bottom
80μs PULSE WIDTH
Tj=25oC
VDS, DRAIN TO SOURCE VOLTAGE (V)
Saturation Characteristics
Figure 10.
0123
45
0
20
40
60
80
5.5V
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS
10V Top
8V
6V
5V
4.5V
4V
Bottom
80μs PULSE WIDTH
Tj=175oC
Saturation Characteristics
Typical Characteristics


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