LY62W12816GL-70LLST datasheet(9/13 Pages) LYONTEK

Part #	LY62W12816GL-70LLST

Description	128K X 16 BIT LOW POWER CMOS SRAM

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Manufacturer	LYONTEK [Lyontek Inc.]

Direct Link	http://www.lyontek.com.tw

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LY62W12816

Rev. 1.3

128K X 16 BIT LOW POWER CMOS SRAM

Lyontek Inc. reserves the rights to change the specifications and products without notice.

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

8



DATA RETENTION CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

VCC for Data Retention

VDR

CE# ≧ VCC - 0.2V

1.5

-

5.5

V

Data Retention Current

IDR

VCC = 1.5V

CE# ≧ VCC - 0.2V

Others at 0.2V or VCC-0.2V

LL/LLI

-

0.5

20

µA

SL

SLI

25℃

-

0.5

4

µA

40℃

-

0.5

4

µA

SL/SLI

-

0.5

15

µA

Chip Disable to Data

Retention Time

tCDR

See Data Retention

Waveforms (below)

0

-

ns

Recovery Time

tR

tRC*

-

ns

tRC* = Read Cycle Time

DATA RETENTION WAVEFORM

Low Vcc Data Retention Waveform (1) (CE# controlled)

Vcc

CE#

VDR ≧ 1.5V

CE# ≧ Vcc-0.2V

Vcc(min.)

VIH

tR

tCDR

VIH

Vcc(min.)

Low Vcc Data Retention Waveform (2) (LB#, UB# controlled)

Vcc

LB#,UB#

VDR ≧ 1.5V

LB#,UB# ≧ Vcc-0.2V

Vcc(min.)

VIH

tR

tCDR

VIH

Vcc(min.)

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