Product Standards

MOS FET

SK8603140L



Absolute Maximum Ratings Ta = 25

C

Note *1 Device mounted on a glass-epoxy board in Figure 1

1. Source

5. Drain

*2 Pulse test: Ensure that the channel temperature does not exceed 150

C

2. Source

6. Drain

*3 VDD = 24 V, VGS = 10 to 0 V, L = 0.1 mH, Tch = 25

C (initial)

3. Source

7. Drain

4. Gate

8. Drain

Page

Internal Connection

Avalanche Energy (Single pulse)

*3

EAR

61

mJ

Avalanche Current (Single pulse)

*3

IAR

23

A

Channel Temperature

Tch

150

C

Storage Temperature Range

Tstg

-55 to +150

50

C / W

Channel to Case

Rth(ch-c)

3.1

Thermal Resistance

Channel to Ambient Rth(ch-a)

2.5

W

Tc = 25

C

40

Total Power

Dissipation

Ta = 25

PD

Tc = 25

C

103

Pulsed, Tch < 150

138

Low Drain-source On-state Resistance : RDS(on) typ = 1.8 m

 (VGS = 4.5 V)

Parameter

Drain Current

Ta = 25

ID

46

A

Ta = 25

25

Drain to Source Voltage

VDS

30

V

Gate to Source Voltage

VGS

20



Packaging

Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)

(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)



Marking Symbol :14

Code

JEITA

Symbol

Rating

Unit

4. Gate

—

SK8603140L

Silicon N-channel MOS FET



Features



 Halogen-free / RoHS compliant

Panasonic

HSO8-F4-B

SC-111BC

Drain

8. Drain

6. Drain

1of 6

Unit : mm

1. Source

5. Drain

2. Source

For Load-switching / For DC-DC Converter

Pin Name

Operating ambient temperature

Topr

-40 to +85

3. Source

7.

Figure 1 FR4 Glass-Epoxy Board

25.4 mm × 25.4 mm × 0.8 mm

1

2

3

4

8

7

6

5

1

2

3

4

8

7

6

5

5.1

1.0

0.22

4.9

1.27

0.4

1

234

5

6

7

8

Established : 2012-12-10

Revised

: 2013-05-31