Product Standards

MOS FET

SK8603150L



Electrical Characteristics Ta = 25

C  3 C

Note： 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.

2. *1 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time

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Static Characteristics

Parameter

Symbol

Conditions

Min

Typ Max

Unit

Drain-source Breakdown Voltage

VDSS

ID = 1 mA, VGS = 0 V

30

V

A

Gate-source Leakage Current

IGSS

VGS =

16 V, VDS = 0 V

10

A

Zero Gate Voltage Drain Current

IDSS

10

VDS = 30 V, VGS = 0 V

Gate-source Threshold Voltage

Vth

ID = 4.38 mA, VDS = 10 V

1.3

Drain-source On-state Resistance

RDS(on)1

ID = 20 A, VGS = 10 V

3

3.5

V

1.9

2.5

m



Dynamic Characteristics

Parameter

Symbol

Conditions

Min

Typ Max

RDS(on)2

ID = 20 A, VGS = 4.5 V

2.5

Unit

Input Capacitance

Ciss

VDS = 10 V, VGS = 0 V

f = 1 MHz

3 700 5 180

pF

Output Capacitance

Coss

430

602

Reverse Transfer Capacitance

Crss

310

496

ns

Rise Time

*1

tr

14

Turn-on Delay Time

*1

td(on)

VDD = 15 V, VGS = 0 to 10 V

ID = 20 A

13

64

ns

Fall Time

*1

tf

9

Turn-off Delay Time

*1

td(off)

VDD = 15 V, VGS = 10 to 0 V

ID = 20 A

Total Gate Charge

Qg

VDD = 15 V, VGS = 0 to 4.5 V

ID = 20 A

28

nC

Gate to Source Charge

Qgs

9

Gate to Drain Charge

Qgd

10

Gate resistance

rg

f = 5 MHz

0.8

3



Body Diode Characteristic

Parameter

Symbol

Conditions

Min

Typ Max

Unit

0.9

1.2

V

Diode Forward Voltage

VSD

IS = 20 A, VGS = 0 V

Established : 2012-09-19

Revised

: 2013-05-31