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PSMN016-100XS Datasheet(PDF) 9 Page - NXP Semiconductors |
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PSMN016-100XS Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 14 page PSMN016-100XS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 4 — 6 March 2012 9 of 14 NXP Semiconductors PSMN016-100XS N-channel 100V 16 m Ω standard level MOSFET in TO220F (SOT186A) Fig 14. Gate charge waveform definitions Fig 15. Gate-source voltage as a function of gate charge; typical values Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Fig 17. Input and reverse transfer capacitances as a function of gate-source voltage, typical values 003aaa508 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) 003aag624 0 2 4 6 8 10 0 10 2030 4050 Q G (nC) V GS (V) V DS= 20V 80V 50V 003aag626 10 2 10 3 10 4 10 -1 1 10 10 2 V DS(V) C (pF) C iss C rss C oss 003aag646 0 1000 2000 3000 4000 5000 0 4 8 12 16 V GS(V) C (pF) C iss C rss |
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