LY62L10248

Rev. 1.2

1024K X 8 BIT LOW POWER CMOS SRAM

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

1



FEATURES

 Fast access time : 55/70ns

 Low power consumption:

Operating current : 30/20mA (TYP.)

Standby current : 5

A (TYP.) LL-version

1.5

A (TYP.) SL-version

 Single 2.7V ~ 3.6V power supply

 All inputs and outputs TTL compatible

 Fully static operation

 Tri-state output

 Data retention voltage : 1.2V (MIN.)

 Green package available

 Package : 44-pin 400 mil TSOP-II

48-ball 6mm x 8mm TFBGA

GENERAL DESCRIPTION

The LY62L10248 is a 8,388,608-bit low power

CMOS static random access memory organized as

1,048,576 words by 8 bits. It is fabricated using very

high performance, high reliability CMOS technology.

Its standby current is stable within the range of

operating temperature.

The LY62L10248 is well designed for very low

power system applications, and particularly well

suited for battery back-up nonvolatile memory

application.

The LY62L10248 operates from a single power

supply of 2.7V ~ 3.6V and all inputs and outputs are

fully TTL compatible

PRODUCT FAMILY

Product

Family

Operating

Temperature

Vcc Range

Speed

Power Dissipation

Operating(Icc,TYP.)

LY62L10248

0 ~ 70℃

2.7 ~ 3.6V

55/70ns

5µA(LL)/1.5µA(SL)

30/20mA

LY62L10248(I)

-40 ~ 85℃

2.7 ~ 3.6V

55/70ns

5µA(LL)/1.5µA(SL)

30/20mA

FUNCTIONAL BLOCK DIAGRAM

DECODER

I/O DATA

CIRCUIT

CONTROL

CIRCUIT

1024Kx8

MEMORY ARRAY

COLUMN I/O

A0-A19

Vcc

Vss

DQ0-DQ7

CE#

WE#

OE#

CE2

PIN DESCRIPTION

SYMBOL

DESCRIPTION

A0 - A19

Address Inputs

DQ0

– DQ7

Data Inputs/Outputs

CE#, CE2

Chip Enable Inputs

WE#

Write Enable Input

OE#

Output Enable Input

Power Supply

Ground

NC

No Connection