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LY61L51216AGL-12T Datasheet(PDF) 2 Page - Lyontek Inc. |
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LY61L51216AGL-12T Datasheet(HTML) 2 Page - Lyontek Inc. |
2 / 12 page LY61L51216A Rev. 1.3 512K X 16 BIT HIGH SPEED CMOS SRAM Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, lndustry E . Rd. 9, Science-Based Industrial Park, Hsinchu 300, Taiwan TEL: 886-3-6668838 FAX: 886-3-6668836 1 ® FEATURES Fast access time : 8/10/12ns low power consumption: Operating current: 90/80/70mA (TYP. 8/10/12ns) Standby current: 3mA(TYP) Single 3.3V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage : 1.5V (MIN.) Green package available Package : 44-pin 400 mil TSOP-II 48-ball 6mmx8mm TFBGA GENERAL DESCRIPTION The LY61L51216A is a 8M-bit high speed CMOS static random access memory organized as 512K words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY61L51216A operates from a single power supply of 3.3V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Product Family Operating Temperature Vcc Range Speed Power Dissipation Standby(ISB1,TYP.) Operating(Icc1,TYP.) LY61L51216A 0 ~ 70℃ 3.0 ~ 3.6V 8/10/12ns 3mA 90/80/70mA LY61L51216A(I) -40 ~ 85℃ 3.0 ~ 3.6V 8/10/12ns 3mA 90/80/70mA LY61L51216A 0 ~ 70℃ 2.7 ~ 3.6V 10/12ns 3mA 80/70mA LY61L51216A(I) -40 ~ 85℃ 2.7 ~ 3.6V 10/12ns 3mA 80/70mA FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION SYMBOL DESCRIPTION A0 - A18 Address Inputs DQ0 – DQ15 Data Inputs/Outputs CE# Chip Enable Input WE# Write Enable Input OE# Output Enable Input LB# Lower Byte Control UB# Upper Byte Control VCC Power Supply VSS Ground |
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