LY61L1288

Rev. 1.5

128K X 8 BIT HIGH SPEED CMOS SRAM

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

1

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FEATURES

Fast access time : 8/10/12/15ns

Low power consumption:

Operating current : 80/75/70/65mA (TYP.)

Standby current : 0.6mA (TYP.)

Single 3.3V power supply

All inputs and outputs TTL compatible

Fully static operation

Tri-state output

Data retention voltage : 2.0V (MIN.)

Green package available

Package : 32-pin 8mm x 13.4mm STSOP

32-pin 400 mil TSOP-II

GENERAL DESCRIPTION

The LY61L1288 is a 1,048,576-bit high speed

CMOS static random access memory organized as

131,072 words by 8 bits. It is fabricated using very

high performance, high reliability CMOS technology.

Its standby current is stable within the range of

operating temperature.

The LY61L1288 is well designed for high speed

system application. Easy expansion is provided by

using an active LOW Chip Enable(CE#). The active

LOW Write Enable(WE#) controls both writing and

reading of the memory.

The LY61L1288 operates from a single power

supply of 3.3V and all inputs and outputs are fully

TTL compatible

PRODUCT FAMILY

Product

Family

Operating

Temperature

Vcc Range

Speed

Power Dissipation

LY61L1288

0 ~ 70℃

3.15 ~ 3.6V

8/10ns

0.6mA

80/75mA

LY61L1288

0 ~ 70℃

3.0 ~ 3.6V

12/15ns

0.6mA

70/65mA

LY61L1288(E)

-20 ~ 80℃

3.15 ~ 3.6V

8/10ns

0.6mA

80/75mA

LY61L1288(E)

-20 ~ 80℃

3.0 ~ 3.6V

12/15ns

0.6mA

70/65mA

LY61L1288(I)

-40 ~ 85℃

3.15 ~ 3.6V

8/10ns

0.6mA

80/75mA

LY61L1288(I)

-40 ~ 85℃

3.0 ~ 3.6V

12/15ns

0.6mA

70/65mA

FUNCTIONAL BLOCK DIAGRAM

DECODER

I/O DATA

CIRCUIT

CONTROL

CIRCUIT

128Kx8

MEMORY ARRAY

COLUMN I/O

A0-A16

Vcc

Vss

DQ0-DQ7

CE#

WE#

OE#

PIN DESCRIPTION

SYMBOL

DESCRIPTION

A0 - A16

Address Inputs

DQ0 – DQ7

Data Inputs/Outputs

CE#

Chip Enable Input

WE#

Write Enable Input

OE#

Output Enable Input

Power Supply

Ground