STP20N65M5 datasheet(7/21 Pages) STMICROELECTRONICS

Part #	STP20N65M5

Description	N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5

Electrical characteristics

Doc ID 022865 Rev 2

7/21

Figure 8.

Gate charge vs gate-source voltage Figure 9.

Static drain-source on-resistance

Figure 10.

Capacitance variations

Figure 11.

Output capacitance stored energy

Figure 12.

Normalized gate threshold voltage

vs temperature

Figure 13.

Normalized on-resistance vs

temperature

VGS

6

4

2

0

10

Qg(nC)

(V)

40

8

20

30

10

VDD=520V

ID=9A

300

200

100

0

400

500

VDS

(V)

VDS

12

AM15589v1

RDS(on)

0.155

0.145

0.135

0.125

0

10

ID(A)

(

Ω)

5

15

0.165

0.175

VGS=10V

0.185

0.195

AM15590v1

C

1000

100

10

1

0.1

10

VDS(V)

(pF)

1

10000

100

Ciss

Coss

Crss

AM15591v1

Eoss

2

1

0

100

VDS(V)

(µJ)

400

3

200 300

4

5

500

600

6

7

AM15592v1

VGS(th)

1.00

0.90

0.80

0.70

-50

0

TJ(°C)

(norm)

-25

1.10

75

25

50

100

ID = 250 µA

VDS = VGS

AM05459v1

RDS(on)

1.7

1.3

0.9

0.5

-50

0

TJ(°C)

(norm)

-25

75

25

50

100

0.7

1.1

1.5

1.9

2.1

VGS= 10V

ID= 9 A

AM05460v1

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