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STP20N65M5 Datasheet(PDF) 7 Page - STMicroelectronics |
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STP20N65M5 Datasheet(HTML) 7 Page - STMicroelectronics |
7 / 21 page STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 Electrical characteristics Doc ID 022865 Rev 2 7/21 Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance Figure 10. Capacitance variations Figure 11. Output capacitance stored energy Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on-resistance vs temperature VGS 6 4 2 0 0 10 Qg(nC) (V) 40 8 20 30 10 VDD=520V ID=9A 300 200 100 0 400 500 VDS (V) VDS 12 AM15589v1 RDS(on) 0.155 0.145 0.135 0.125 0 10 ID(A) ( Ω) 5 15 0.165 0.175 VGS=10V 0.185 0.195 AM15590v1 C 1000 100 10 1 0.1 10 VDS(V) (pF) 1 10000 100 Ciss Coss Crss AM15591v1 Eoss 2 1 0 0 100 VDS(V) (µJ) 400 3 200 300 4 5 500 600 6 7 AM15592v1 VGS(th) 1.00 0.90 0.80 0.70 -50 0 TJ(°C) (norm) -25 1.10 75 25 50 100 ID = 250 µA VDS = VGS AM05459v1 RDS(on) 1.7 1.3 0.9 0.5 -50 0 TJ(°C) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 VGS= 10V ID= 9 A AM05460v1 |
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