STI20N65M5 datasheet(3/21 Pages) STMICROELECTRONICS

Part #	STI20N65M5

Description	N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5

Electrical ratings

Doc ID 022865 Rev 2

3/21

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

V

ID

Drain current (continuous) at TC = 25 °C

18

A

ID

Drain current (continuous) at TC = 100 °C

11.3

A

IDM

(1)

Drain current (pulsed)

72

A

PTOT

Total dissipation at TC = 25 °C

130

W

dv/dt (1)

1.

ISD ≤ 18 A, di/dt ≤400 A/µs; VDS peak < V(BR)DSS, VDD=400 V

Peak diode recovery voltage slope

15

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Tj

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

D2PAK

I2PAK,

TO-220

TO-247

Rthj-case Thermal resistance junction-case max

0.96

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

50

°C/W

Rthj-pcb

(1)

1.

When mounted on 1 inch² FR-4, 1 Oz copper board.

Thermal resistance junction-pcb max

30

°C/W

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetetive or not

repetetive (pulse width limited by Tjmax )

4A

EAS

Single pulse avalanche energy (starting

tj=25°C, Id= IAR; Vdd=50 V)

270

mJ

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