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STI20N65M5 Datasheet(PDF) 3 Page - STMicroelectronics |
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STI20N65M5 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 21 page STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 Electrical ratings Doc ID 022865 Rev 2 3/21 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 18 A ID Drain current (continuous) at TC = 100 °C 11.3 A IDM (1) Drain current (pulsed) 72 A PTOT Total dissipation at TC = 25 °C 130 W dv/dt (1) 1. ISD ≤ 18 A, di/dt ≤400 A/µs; VDS peak < V(BR)DSS, VDD=400 V Peak diode recovery voltage slope 15 V/ns Tstg Storage temperature - 55 to 150 °C Tj Max. operating junction temperature 150 °C Table 3. Thermal data Symbol Parameter Value Unit D2PAK I2PAK, TO-220 TO-247 Rthj-case Thermal resistance junction-case max 0.96 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 50 °C/W Rthj-pcb (1) 1. When mounted on 1 inch² FR-4, 1 Oz copper board. Thermal resistance junction-pcb max 30 °C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax ) 4A EAS Single pulse avalanche energy (starting tj=25°C, Id= IAR; Vdd=50 V) 270 mJ |
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