STI24N60M2 datasheet(4/22 Pages) STMICROELECTRONICS

Part #	STI24N60M2

Description	N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK

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Electrical characteristics

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2

4/22

DocID023964 Rev 4

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

600

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 600 V

VDS = 600 V, TC=125 °C

1

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

±10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 9 A

0.168

0.19

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

-

1060

-

pF

Coss

Output capacitance

-

55

-

pF

Crss

Reverse transfer

capacitance

-2.2

-

pF

Coss eq.

(1)

1.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VDS = 0 to 480 V, VGS = 0

-

258

-

pF

RG

Intrinsic gate

resistance

f = 1 MHz, ID = 0

-

7

-

Ω

Qg

Total gate charge

VDD = 480 V, ID = 18 A,

VGS = 10 V

(see Figure 17)

-29

-

nC

Qgs

Gate-source charge

-

6

-

nC

Qgd

Gate-drain charge

-

12

-

nC

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 9 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 16 and 21)

-14

-

ns

tr

Rise time

-

9

-

ns

td(off)

Turn-off delay time

-

60

-

ns

tf(i)

Fall time

-

15

-

ns

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