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STF24N60M2 Datasheet(PDF) 4 Page - STMicroelectronics

Part No. STF24N60M2
Description  N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in TO-220FP and I2PAKFP packages
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STF24N60M2 Datasheet(HTML) 4 Page - STMicroelectronics

 
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Electrical characteristics
STF24N60M2, STFI24N60M2
4/14
DocID024026 Rev 4
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
VGS = 0, ID = 1 mA
600
V
IDSS
Zero gate voltage
drain current
VGS = 0, VDS = 600 V
1
µA
VGS = 0,
VDS = 600 V, TC=125 °C
100
µA
IGSS
Gate-body leakage
current
VDS = 0, VGS = ± 25 V
±10
µA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 9 A
0.168
0.19
Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
-
1060
-
pF
Coss
Output capacitance
-
55
-pF
Crss
Reverse transfer
capacitance
-
2.2
-pF
Coss eq.
(1)
1.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0
-
258
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz, ID=0
-
7
-
Ω
Qg
Total gate charge
VDD = 480 V, ID = 18 A,
VGS = 10 V
(see Figure 14)
-29
-
nC
Qgs
Gate-source charge
-
6
-
nC
Qgd
Gate-drain charge
-
12
-
nC


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