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STF24N60M2 Datasheet(PDF) 3 Page - STMicroelectronics

Part No. STF24N60M2
Description  N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in TO-220FP and I2PAKFP packages
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STF24N60M2 Datasheet(HTML) 3 Page - STMicroelectronics

 
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DocID024026 Rev 4
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STF24N60M2, STFI24N60M2
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
18 (1)
1.
Limited by maximum junction temperature.
A
ID
Drain current (continuous) at TC = 100 °C
12 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
72 (1)
A
PTOT
Total dissipation at TC = 25 °C
30
W
dv/dt (3)
3.
ISD ≤ 18 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V.
Peak diode recovery voltage slope
15
V/ns
dv/dt(4)
4.
VDS ≤ 480 V
MOSFET dv/dt ruggedness
50
V/ns
VISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t = 1 s; TC = 25 °C)
2500
V
Tstg
Storage temperature
- 55 to 150
°C
Tj
Max. operating junction temperature
Table 3. Thermal data
Symbol
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
4.17
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetetive or not repetetive (pulse width
limited by Tjmax )
3.5
A
EAS
Single pulse avalanche energy (starting Tj=25°C, ID= IAR;
VDD=50)
180
mJ


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