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STF24N60M2 Datasheet(PDF) 1 Page - STMicroelectronics

Part No. STF24N60M2
Description  N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in TO-220FP and I2PAKFP packages
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STF24N60M2 Datasheet(HTML) 1 Page - STMicroelectronics

 
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This is information on a product in full production.
May 2013
DocID024026 Rev 4
1/14
14
STF24N60M2, STFI24N60M2
N-channel 600 V, 0.168
Ω typ., 18 A MDmesh II Plus™ low Qg
Power MOSFET in TO-220FP and I2PAKFP packages
Datasheet
production data
Figure 1. Internal schematic diagram
Features
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• LLC converters, resonant converters
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
D(2)
G(1)
S(3)
AM01476v1
TO-220FP
I2PAKFP
1
2
3
1 2 3
(TO-281)
Order codes
VDS @ TJmax
RDS(on) max
ID
STF24N60M2
650 V
0.19
Ω
18 A
STFI24N60M2
Table 1. Device summary
Order codes
Marking
Package
Packaging
STF24N60M2
24N60M2
TO-220FP
Tube
STFI24N60M2
I2PAKFP (TO-281)
www.st.com


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