LY61L1024

Rev. 2.7

128K X 8 BIT HIGH SPEED CMOS SRAM

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

1

®

FEATURES

Fast access time : 10/12/15/18ns

Low power consumption:

Operating current : 75/70/65/55mA (TYP.)

Standby current : 0.6mA (TYP.)

1

μA (TYP.) LL -version

Single 3.3V power supply

All inputs and outputs TTL compatible

Fully static operation

Tri-state output

Data retention voltage : 2.0V (MIN.)

Green package available

Package : 32-pin 300 mil SOJ

32-pin 8mm x 20mm TSOP-I

32-pin 8mm x 13.4mm STSOP

36-ball 6mm x 8mm TFBGA

GENERAL DESCRIPTION

The LY61L1024 is a 1,048,576-bit low power CMOS

static random access memory organized as 131,072

words by 8 bits. It is fabricated using very high

performance, high reliability CMOS technology. Its

standby current is stable within the range of

operating temperature.

The LY61L1024 is well designed for very high speed

system applications, and particularly well suited for

battery back-up nonvolatile memory application.

The LY61L1024 operates from a single power

supply of 3.3V and all inputs and outputs are fully

TTL compatible

PRODUCT FAMILY

Product

Family

Operating

Temperature

Vcc Range

Speed

Power Dissipation

Operating(Icc,TYP.)

LY61L1024

0 ~ 70℃

3.15 ~ 3.6V

10ns

0.6mA

75mA

LY61L1024

0 ~ 70℃

3.0 ~ 3.6V

12/15ns

0.6mA

70/65mA

LY61L1024(I)

-40 ~ 85℃

3.15 ~ 3.6V

10ns

0.6mA

75mA

LY61L1024(I)

-40 ~ 85℃

3.0 ~ 3.6V

12/15ns

0.6mA

70/65mA

LY61L1024(LL)

0 ~ 70℃

3.0 ~ 3.6V

18ns

1µA

55mA

LY61L1024(LLI)

-40 ~ 85℃

3.0 ~ 3.6V

18ns

1µA

55mA