LY61L256RL-10LLE datasheet(5/12 Pages) LYONTEK

Part #	LY61L256RL-10LLE

Description	32K X 8 BIT HIGH SPEED CMOS SRAM

Download	12 Pages

Scroll/Zoom	100%

Manufacturer	LYONTEK [Lyontek Inc.]

Direct Link	http://www.lyontek.com.tw

Logo

5 / 12 page

LY61L256

Rev. 1.4

32K X 8 BIT HIGH SPEED CMOS SRAM

Lyontek Inc. reserves the rights to change the specifications and products without notice.

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

4

®

Notes:

1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.

2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.

3. Over/Undershoot specifications are characterized, not 100% tested.

4. Typical values are included for reference only and are not guaranteed or tested.

Typical valued are measured at VCC = VCC(TYP.) and TA = 25℃

CAPACITANCE (TA = 25 , f

℃

= 1.0MHz)

PARAMETER

SYMBOL

MIN.

MAX

UNIT

Input Capacitance

CIN

-

6

pF

Input/Output Capacitance

CI/O

-

8

pF

Note : These parameters are guaranteed by device characterization, but not production tested.

AC TEST CONDITIONS

Input Pulse Levels

0.2V to VCC -0.2V

Input Rise and Fall Times

3ns

Input and Output Timing Reference Levels

1.5V

Output Load

CL = 30pF + 1TTL, IOH/IOL = -4mA/8mA

AC ELECTRICAL CHARACTERISTICS

(1) READ CYCLE

PARAMETER

SYM.

LY61L256-10

LY61L256-12

LY61L256-15

UNIT

MIN.

MAX.

MIN.

MAX.

MIN.

MAX.

Read Cycle Time

tRC

10

-

12

-

15

-

ns

Address Access Time

tAA

-

10

-

12

-

15

ns

Chip Enable Access Time

tACE

-

10

-

12

-

15

ns

Output Enable Access Time

tOE

-

5

-

6

-

7

ns

Chip Enable to Output in Low-Z

tCLZ*

2

-

3

-

4

-

ns

Output Enable to Output in Low-Z

tOLZ*

0

-

0

-

0

-

ns

Chip Disable to Output in High-Z

tCHZ*

-

5-

6-

7

ns

Output Disable to Output in High-Z

tOHZ*

-

5-

6-

7

ns

Output Hold from Address Change

tOH

1

-

3

-

3

-

ns

(2) WRITE CYCLE

PARAMETER

SYM.

LY61L256-10

LY61L256-12

LY61L256-15

UNIT

MIN.

MAX.

MIN.

MAX.

MIN.

MAX.

Write Cycle Time

tWC

10

-

12

-

15

-

ns

Address Valid to End of Write

tAW

8

-

10

-

12

-

ns

Chip Enable to End of Write

tCW

8

-

10

-

12

-

ns

Address Set-up Time

tAS

0

-

0

-

0

-

ns

Write Pulse Width

tWP

8

-

9

-

10

-

ns

Write Recovery Time

tWR

0

-

0

-

0

-

ns

Data to Write Time Overlap

tDW

6

-

7

-

8

-

ns

Data Hold from End of Write Time

tDH

0

-

0

-

0

-

ns

Output Active from End of Write

tOW*

2

-

3

-

4

-

ns

Write to Output in High-Z

tWHZ*

-

6-7-

8

ns

*These parameters are guaranteed by device characterization, but not production tested.

Similar Part No. - LY61L256RL-10LLE

Manufacturer	Part #	Datasheet	Description
Lyontek Inc.	LY61L256RL	165Kb / 12P	32K X 8 BIT HIGH SPEED CMOS SRAM

More results

Similar Description - LY61L256RL-10LLE

Manufacturer	Part #	Datasheet	Description
List of Unclassifed Man...	UT61256	185Kb / 10P	32K X 8 BIT HIGH SPEED CMOS SRAM
Lyontek Inc.	LY61L256	852Kb / 14P	32K X 8 BIT HIGH SPEED CMOS SRAM
List of Unclassifed Man...	UT6164B	163Kb / 9P	32K X 8 BIT HIGH SPEED CMOS SRAM
Lyontek Inc.	LY61256	895Kb / 15P	32K X 8 BIT HIGH SPEED CMOS SRAM
	LY65256	325Kb / 12P	32K X 8 BIT HIGH SPEED CMOS SRAM
	LY65W256	328Kb / 12P	32K X 8 BIT HIGH SPEED CMOS SRAM
	LY61L256	165Kb / 12P	32K X 8 BIT HIGH SPEED CMOS SRAM
AMIC Technology	LP61L256C	110Kb / 11P	32K X 8 BIT HIGH SPEED CMOS SRAM
Lyontek Inc.	LY61256_1008	232Kb / 13P	32K X 8 BIT HIGH SPEED CMOS SRAM
AMIC Technology	A615308	199Kb / 12P	32K X 8 BIT HIGH SPEED CMOS SRAM

More results

LY61L256RL-10LLE Datasheet(PDF) 5 Page - Lyontek Inc.

LY61L256RL-10LLE Datasheet(HTML) 5 Page - Lyontek Inc.

Similar Part No. - LY61L256RL-10LLE

Similar Description - LY61L256RL-10LLE

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL