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STR-S6411 Datasheet(PDF) 3 Page - Allegro MicroSystems |
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STR-S6411 Datasheet(HTML) 3 Page - Allegro MicroSystems |
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3 / 8 page 
ALLOWABLE AVALANCHE ENERGY ELECTRICAL CHARACTERISTICS at T A = +25°C, VIN = 17 V, voltage measurements are referenced to Signal Ground (pin 8) (unless otherwise noted). Limits Characteristic Symbol Test Conditions Min. Typ. Max. Units On-State Voltage V INT Turn-on, increasing V IN 14.4 16 17.6 V Under-Voltage Lockout V INQ Turn-off, decreasing V IN 8.4 9.4 10.4 V FET Leakage Current I DSS V DS = 800 V – – 1.2 mA FET ON Resistance r DS(on) V GS = 10 V, ID = 3 A – 1.8 2.2 Ω Forward Transconductance g fs V GS = 10 V, ID = 3 A 3.0 – – S FET Input Capacitance C iss V DS=10 V, VGS=0 V, f=1 MHz – 1800 – pF Propagation Delay Time t phl Turn-on, 10% V GS to 10% VDS –60 – ns t plh Turn-off, 90% V GS to 90% VDS – 140 – ns Oscillator Frequency f osc 93 100 107 kHz Maximum ON Time t on STR-S6411 5.1 5.7 6.5 µs STR-S6411F 3.8 4.5 5.2 µs Over-Current Threshold V OCP(th) 160 200 240 mV OCP Current I OCP -250 -400 -550 µA Feedback Current I FDBK – -1.8 – mA Soft Start Threshold Voltage V SS(th) – – 0.4 V Soft Start Current I SS V SS = 0 V – -100 – µA Power Ground Current I PG t w = 200 ns – -1.0 -1.5 A Supply Current I IN(ON) Operating – 23 – mA I IN(OFF) Start up, V IN = 12 V – – 500 µA Insulation RMS Voltage V WM(RMS) All terminals simultaneous reference 2000 – – V metal plate against backside Thermal Resistance RθJM FET channel to mounting surface – 2.0 – °C/W NOTES: Negative current is defined as coming out of (sourcing) the specified device terminal. Typical Data is for design information only. 600 400 200 0 60 100 140 100 STARTING CHANNEL TEMPERATURE in °C Dwg. GK-009-1 300 500 0 20 40 80 120 160 SINGLE PULSE DRAIN CURRENT = 5 A SUPPLY VOLTAGE = 50 V STR-S6411 AND STR-S6411F OFF-LINE SWITCHING REGULATORS |
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