STL8N10LF3 datasheet(5/13 Pages) STMICROELECTRONICS

Part #	STL8N10LF3

Description	N-channel 100 V, 25 mA typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 package

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STL8N10LF3

Electrical characteristics

Doc ID 023977 Rev 1

5/13

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

ISD

Source-drain current

-

7.8

A

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current (pulsed)

-

31.2

A

VSD

(2)

2.

Pulsed: pulse duration= 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 7.8 A, VGS=0

-

1.3

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 7.8 A,

di/dt = 100 A/µs,

VDD=48 V, Tj=150 °C

-

42.5

87

4.08

ns

nC

A

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