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STL36N55M5 Datasheet(PDF) 3 Page - STMicroelectronics

Part No. STL36N55M5
Description  N-channel 550 V, 0.066 typ., 22.5 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV package
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STL36N55M5 Datasheet(HTML) 3 Page - STMicroelectronics

 
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STL36N55M5
Electrical ratings
Doc ID 022602 Rev 3
3/17
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
550
V
VGS
Gate-source voltage
± 25
V
ID
(1)
1.
The value is rated according to Rthj-case and limited by package..
Drain current (continuous) at TC = 25 °C
22.5
A
ID
(1)
Drain current (continuous) at TC = 100 °C
17
A
IDM
(1),(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
90
A
ID
(3)
3.
When mounted on FR-4 board of inch², 2oz Cu.
Drain current (continuous) at Tamb = 25 °C
3.7
A
ID
(3)
Drain current (continuous) at Tamb = 100 °C
2.2
A
PTOT
(3)
Total dissipation at Tamb = 25 °C
2.8
W
PTOT
(1)
Total dissipation at TC = 25 °C
150
W
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
7A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
510
mJ
dv/dt (4)
4.
ISD ≤ 22.5 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS, VDD = 340 V.
Peak diode recovery voltage slope
15
V/ns
Tstg
Storage temperature
- 55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
0.83
°C/W
Rthj-amb
(1)
1.
When mounted on FR-4 board of inch², 2oz Cu.
Thermal resistance junction-ambient max
45
°C/W


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