DS90LV019MDC datasheet(4/12 Pages) TI

Part #	DS90LV019MDC

Description	DS90LV019 3.3V or 5V LVDS Driver/Receiver

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Manufacturer	TI [Texas Instruments]

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DC Electrical Characteristics

T

A = −40˚C to +85˚C unless otherwise noted, VCC = 5.0 ± 0.5V. (Notes 2, 3)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

DIFFERENTIAL DRIVER CHARACTERISTICS

V

OD

Output Differential Voltage

R

L = 100Ω (Figure 1)

DO+,

DO−

250

360

450

mV

∆V

OD

V

OD Magnitude Change

660

mV

V

OS

Offset Voltage

1

1.25

1.8

V

∆V

OS

Offset Magnitude Change

5

60

mV

I

OZD

TRI-STATE Leakage

V

OUT =VCC or GND, DE = 0V

−10

±1

+10

µA

I

OXD

Power-Off Leakage

V

OUT = 5.5V or GND, VCC = 0V

−10

±1

+10

µA

I

OSD

Output Short Circuit Current

V

OUT = 0V, DE = VCC

−10

−6

−4

mA

DIFFERENTIAL RECEIVER CHARACTERISTICS

V

OH

Voltage High

VID = +100 mV

I

OH = −400 µA

R

OUT

4.3

5.0

V

Inputs Open

4.3

5.0

V

OL

Voltage Output Low

I

OL = 2.0 mA, VID = −100 mV

0.1

0.4

V

I

OS

Output Short Circuit Current

V

OUT = 0V

−150

−75

−40

mA

V

TH

Input Threshold High

RI+,

RI−

+100

mV

V

TH

Input Threshold Low

−100

mV

I

IN

Input Current

V

IN = +2.4V or 0V, VCC = 5.5V or

0V

−15

±1

+15

µA

DEVICE CHARACTERISTICS

V

IH

Minimum Input High Voltage

D

IN,

DE ,RE

2.0

V

CC

V

IL

Maximum Input Low Voltage

GND

0.8

V

I

IH

Input High Current

V

IN =VCC or 2.4 V

±1

±10

µA

I

IL

Input Low Current

V

IN = GND or 0.4V

±1

±10

µA

V

CL

Input Diode Clamp Voltage

I

CLAMP = −18 mA

−1.5

−0.8

V

I

CCD

Power Supply Current

DE = RE = V

CC

V

CC

12

19

mA

I

CCR

DE=RE=0V

5.8

8

mA

I

CCZ

DE = 0V, RE = V

CC

4.5

8.5

mA

I

CC

DE=V

CC,RE=0V

18

48

mA

C

D output

Capacitance

DO+,

DO−

5pF

C

R input

Capacitance

RI+,

RI−

5pF

Note 1: “Absolute Maximum Ratings” are these beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device should

be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation.

Note 2: All currents into device pins are positive; all currents out of device pins are negative. All voltages are referenced to device ground unless otherwise specified.

Note 3: All typicals are given for VCC = +3.3V or +5.0V and TA = +25˚C, unless otherwise stated.

Note 4: ESD Rating:

HBM (1.5 k

Ω, 100 pF) > 2.0 kV

EIAJ (0

Ω, 200 pF) > 200V.

Note 5: CL includes probe and fixture capacitance.

Note 6: Generator waveforms for all tests unless otherwise specified;f=1 MHz, ZO =50Ω,tr =tf ≤ 6.0 ns (0%–100%).

AC Electrical Characteristics

T

A = −40˚C to +85˚C, VCC = 3.3V ± 0.3V. (Note 6)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

DRIVER TIMING REQUIREMENTS

t

PHLD

Differential Propagation Delay High to Low

R

L = 100Ω,

C

L =10pF

(

Figure 2 and Figure 3)

2.0

4.0

6.5

ns

t

PLHD

Differential Propagation Delay Low to High

1.0

5.6

7.0

ns

t

SKD

Differential Skew |t

PHLD −tPLHD|

0.4

1.0

ns

t

TLH

Transition Time Low to High

0.2

0.7

3.0

ns

t

THL

Transition Time High to Low

0.2

0.8

3.0

ns

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