If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Supply Voltage V

CC

6.0V

Enable Input Voltage (DE, RE)

−0.3V to (V

Driver Input Voltage (D

−0.3V to (V

Receiver Output Voltage

(R

−0.3V to (V

−0.3V to +3.9V

−0.3V to (V

Driver Short Circuit Current

Continuous

ESD (Note 4)

(HBM, 1.5 k

Ω, 100 pF)

(EIAJ, 0

Ω, 200 pF)

Maximum Package Power Dissipation at 25˚C

SOIC

960 mW

Derate SOIC Package

7.7mW/˚C

TSSOP

790 mW

Derate TSSOP Package

6.3mW/˚C

Storage Temperature Range

−65˚C to +150˚C

Lead Temperature

(Soldering, 4 sec.)

260˚C

Recommended Operating

Conditions

Min

Max

Units

Supply Voltage (V

3.0

3.6

V

Supply Voltage (V

4.5

5.5

V

Receiver Input Voltage

0.0

2.4

V

Operating Free Air

Temperature T

A

−40

+85

˚C

DC Electrical Characteristics

T

Symbol

Parameter

Conditions

Pin

Min

Typ

Max

Units

DIFFERENTIAL DRIVER CHARACTERISTICS

V

OD

Output Differential Voltage

R

DO+,

DO−

250

350

450

mV

∆V

OD

V

660

mV

V

OS

Offset Voltage

1

1.25

1.7

V

∆V

OS

Offset Magnitude Change

5

60

mV

I

OZD

V

−10

+10

µA

I

OXD

Power-Off Leakage

V

−10

+10

µA

I

OSD

Output Short Circuit Current

V

−10

−6

−4

mA

DIFFERENTIAL RECEIVER CHARACTERISTICS

V

OH

Voltage Output High

VID = +100 mV

I

R

OUT

2.9

3.3

V

Inputs Open

2.9

3.3

V

V

OL

Voltage Output Low

I

0.1

0.4

V

I

OS

Output Short Circuit Current

V

−75

−34

−20

mA

V

TH

Input Threshold High

RI+,

RI−

+100

mV

V

TH

Input Threshold Low

−100

mV

I

IN

Input Current

V

0V

−10

+10

µA

DEVICE CHARACTERISTICS

V

IH

Minimum Input High Voltage

D

DE, RE

2.0

V

CC

V

V

IL

Maximum Input Low Voltage

GND

0.8

V

I

IH

Input High Current

V

µA

I

IL

Input Low Current

V

µA

V

CL

Input Diode Clamp Voltage

I

−1.5

−0.7

V

I

CCD

Power Supply Current

DE = RE = V

CC

V

CC

9

12.5

mA

I

CCR

DE=RE=0V

4.5

7.0

mA

I

CCZ

DE = 0V, RE = V

CC

3.7

7.0

mA

I

CC

DE=V

15

20

mA

C

D output

Capacitance

DO+,

DO−

5pF

C

R input

Capacitance

RI+,

RI−

5pF

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