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RB051M-2YTR Datasheet(PDF) 1 Page - Rohm |
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RB051M-2YTR Datasheet(HTML) 1 Page - Rohm |
1 / 4 page www.rohm.com ©20 11 ROHM Co., Ltd. All rights reserved. Schottky Barrier Diode RB051M-2Y Applications Dimensions(Unit : mm) Land size figure(Unit : mm) General rectification Features 1)Small power mold type.(PMDU) 2)Ultra Low VF 3)High reliability Construction Silicon epitaxial planer Structure Taping specifications(Unit : mm) Absolute maximum ratings (Ta=25 C) Symbol Unit VRM V VR V Io A IFSM A Tj C Tstg C Electrical characteristics(Ta=25 C) Symbol Min. Typ. Max. Unit Forward voltage VF - - 0.46 V IF=3A Reverse current IR - - 0.9 mA VR=20V Parameter Conditions Parameter Limits Reverse voltage (repetitive) 20 Reverse voltage (DC) 20 Average rectified forward current(*1) 3 Storage temperature -40 to +125 (*1)Mounting on alumina board. Tc=95 C Max. Forward current surge peak (60Hz・1cyc) 30 Junction temperature 125 PMDU 1.2 4.0±0.1 2.0±0.05 φ1.55±0.05 1.81±0.1 4.0±0.1 φ1.0±0.1 0.25±0.05 1.5MAX 1/3 2011.05 - Rev.C |
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