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PSMN011-30YLC Datasheet(PDF) 8 Page - NXP Semiconductors |
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PSMN011-30YLC Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 15 page PSMN011-30YLC All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 24 October 2011 8 of 15 NXP Semiconductors PSMN011-30YLC N-channel 30 V 11.6 m Ω logic level MOSFET in LFPAK using NextPower technology Fig 8. Forward transconductance as a function of drain current; typical values Fig 9. Transfer characteristics; drain current as a function of gate-source voltage; typical values Fig 10. Sub-threshold drain current as a function of gate-source voltage Fig 11. Gate-source threshold voltage as a function of junction temperature 003aag221 0 10 20 30 40 50 0 1020 3040 I D (A) g fs (S) 003aag222 0 10 20 30 40 50 012 34 V GS(V) I D (A) T j = 25 °C T j = 150 °C 003aag223 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 01 23 V GS(V) I D (A) Min Typ Max 003aag224 0 1 2 3 -60 0 60 120 180 T j (°C) V GS(th) (V) Max (1mA) Min (5mA) I D =5mA 1mA |
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