PSMN011-30YLC

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 3 — 24 October 2011

8 of 15

NXP Semiconductors

PSMN011-30YLC

N-channel 30 V 11.6 m

Ω logic level MOSFET in LFPAK using NextPower technology

Fig 8.

Forward transconductance as a function of

drain current; typical values

Fig 9.

Transfer characteristics; drain current as a

function of gate-source voltage; typical values

Fig 10. Sub-threshold drain current as a function of

gate-source voltage

Fig 11. Gate-source threshold voltage as a function of

junction temperature

003aag221

0

10

20

30

40

50

0

1020

3040

I

g

fs

(S)

003aag222

0

10

20

30

40

50

012

34

V

I

D

(A)

T

T

003aag223

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

01

23

V

I

D

(A)

Min

Typ

Max

003aag224

0

1

2

3

-60

0

60

120

180

T

V

GS(th)

(V)

Max (1mA)

Min (5mA)

I

1mA