SMMBT3904WT1G datasheet(10/12 Pages) ONSEMI

Part #	SMMBT3904WT1G

Description	General Purpose Transistors NPN and PNP Silicon

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP

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MMBT3906WT1

Figure 33. Collector Saturation Region

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0.1

0.5

2.0

3.0

10

0.2

0.3

0

1.0

0.7

5.0

7.0

IC = 1.0 mA

TJ = 25°C

0.07

0.05

0.03

0.02

0.01

10 mA

30 mA

100 mA

MMBT3906WT1

Figure 34. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 35. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A)

1

0.1

0.01

0.001

0

0.05

0.15

0.20

0.25

0.40

0.45

0.50

1

0.1

0.01

0.001

0.0001

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Figure 36. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

1

0.1

0.01

0.001

0.0001

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.10

0.30

IC/IB = 10

150°C

−55°C

25°C

IC/IB = 10

150°C

−55°C

25°C

150°C

−55°C

25°C

VCE = 1 V

0.35

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