NVD5890NT4G datasheet(4/7 Pages) ONSEMI

Part #	NVD5890NT4G

Description	Power MOSFET 40 V, 123 A, Single N?묬hannel DPAK

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NVD5890N

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TYPICAL PERFORMANCE CURVES

7 V

1

10

100

1000

0

4

8

12

16

2024

283236

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On−Resistance vs. Drain Current

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

ID, DRAIN CURRENT (A)

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

2

3

456

VDS ≥ 10 V

TJ = 25°C

TJ = −55°C

TJ = 150°C

0

2

4

6

8

10

12

14

16

18

20

40

80

120

160

VGS = 5 V

TJ = 25°C

VGS = 10 V

0.5

0.75

1.0

1.25

1.5

1.75

2.0

−50 −25

0

25

50

75

100 125 150 175

VGS = 10 V

ID = 50 A

VGS = 0 V

TJ = 150°C

TJ = 175°C

0

20

100

140

200

01

2

5

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

34

40

60

80

120

160

180

TJ = 25°C

VGS = 5 V

10 V

6 V

4 V

4.5 V

4.2 V

3.8 V

3.6 V

VGS, GATE−TO−SOURCE VOLTAGE (V)

ID = 50 A

0

4

10

34

6

10

79

2

6

TJ = 25°C

58

220

240

260

280

300

0

20

100

140

200

40

60

80

120

160

180

220

240

260

280

300

12

16

20

14

18

8

0

200

240

280

40

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