NTMD6P02R2SG datasheet(2/6 Pages) ONSEMI

Part #	NTMD6P02R2SG

Description	Power MOSFET 6 A, 20 V, P?묬hannel SOIC??, Dual

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Manufacturer	ONSEMI [ON Semiconductor]

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NTMD6P02, NVMD6P02

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)*

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = −250 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

−20

−

−11.6

−

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = −20 Vdc, VGS = 0 Vdc, TJ = 25°C)

(VDS = −20 Vdc, VGS = 0 Vdc, TJ = 70°C)

IDSS

−

−1.0

−5.0

mAdc

Gate−Body Leakage Current

(VGS = −12 Vdc, VDS = 0 Vdc)

IGSS

−

−100

nAdc

Gate−Body Leakage Current

(VGS = +12 Vdc, VDS = 0 Vdc)

IGSS

−

100

nAdc

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = VGS, ID = −250 mAdc)

Temperature Coefficient (Negative)

VGS(th)

−0.6

−

−0.88

2.6

−1.20

−

Vdc

mV/°C

Static Drain−to−Source On−State Resistance

(VGS = −4.5 Vdc, ID = −6.2 Adc)

(VGS = −2.5 Vdc, ID = −5.0 Adc)

(VGS = −2.5 Vdc, ID = −3.1 Adc)

RDS(on)

−

0.027

0.038

0.033

0.050

−

W

Forward Transconductance (VDS = −10 Vdc, ID = −6.2 Adc)

gFS

−

15

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = −16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

−

1380

1700

pF

Output Capacitance

Coss

−

515

775

Reverse Transfer Capacitance

Crss

−

250

450

SWITCHING CHARACTERISTICS (Notes 5 and 6)

Turn−On Delay Time

(VDD = −10 Vdc, ID = −1.0 Adc,

VGS = −10 Vdc,

RG = 6.0 W)

td(on)

−

15

25

ns

Rise Time

tr

−

20

50

Turn−Off Delay Time

td(off)

−

85

125

Fall Time

tf

−

50

110

Turn−On Delay Time

(VDD = −16 Vdc, ID = −6.2 Adc,

VGS = −4.5 Vdc,

RG = 6.0 W)

td(on)

−

17

−

ns

Rise Time

tr

−

65

−

Turn−Off Delay Time

td(off)

−

50

−

Fall Time

tf

−

80

−

Total Gate Charge

(VDS = −16 Vdc,

VGS = −4.5 Vdc,

ID = −6.2 Adc)

Qtot

−

20

35

nC

Gate−Source Charge

Qgs

−

4.0

−

Gate−Drain Charge

Qgd

−

8.0

−

BODY−DRAIN DIODE RATINGS (Note 5)

Diode Forward On−Voltage

(IS = −1.7 Adc, VGS = 0 Vdc)

(IS = −1.7 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

−

−0.80

−0.65

−1.2

−

Vdc

Diode Forward On−Voltage

(IS = −6.2 Adc, VGS = 0 Vdc)

(IS = −6.2 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

−

−0.95

−0.80

−

Vdc

Reverse Recovery Time

(IS = −1.7 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms)

trr

−

50

80

ns

ta

−

20

−

tr

−

30

−

Reverse Recovery Stored Charge

QRR

−

0.04

−

mC

5. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.

6. Switching characteristics are independent of operating junction temperature.

*Handling precautions to protect against electrostatic discharge are mandatory.

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