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NTD5802N Datasheet(PDF) 1 Page - ON Semiconductor

Part # NTD5802N
Description  Power MOSFET 40 V, Single N?묬hannel, 101 A DPAK
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTD5802N Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2011
August, 2011 − Rev. 6
1
Publication Order Number:
NTD5802N/D
NTD5802N, NVD5802N
Power MOSFET
40 V, Single N−Channel, 101 A DPAK
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
MSL 1/260°C
AEC Q101 Qualified
100% Avalanche Tested
AEC Q101 Qualified − NVD5802N
These Devices are Pb−Free and are RoHS Compliant
Applications
CPU Power Delivery
DC−DC Converters
Motor Driver
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
"20
V
Continuous Drain Cur-
rent (RqJC) (Note 1)
Steady
State
TC = 25°C
ID
101
A
TC = 85°C
78
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
PD
93.75
W
Continuous Drain Cur-
rent (RqJA) (Note 1)
TA = 25°C
ID
16.4
A
TA = 85°C
12.7
Power Dissipation
(RqJA) (Note 1)
TA = 25°C
PD
2.5
W
Pulsed Drain Current
tp=10ms TA = 25°C
IDM
300
A
Current Limited by Package
TA = 25°C IDmaxPkg
45
A
Operating Junction and Storage Temperature
TJ, Tstg
−55 to
175
°C
Source Current (Body Diode)
IS
50
A
Drain to Source dV/dt
dV/dt
6.0
V/ns
Single Pulse Drain−to−Source Avalanche En-
ergy (VDD = 32 V, VGS = 10 V,
L = 0.3 mH, IL(pk) = 40 A, RG = 25 W)
EAS
240
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
CASE 369C
DPAK
(Bent Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
40 V
4.4 mW @ 10 V
RDS(on)
101 A
ID
V(BR)DSS
7.8 mW @ 5.0 V
http://onsemi.com
1 2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
N−Channel
D
S
G
1
Gate
2
Drain 3
Source
4
Drain
Y
= Year
WW
= Work Week
5802N = Device Code
G
= Pb−Free Package
50 A


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