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NVD5802NT4G Datasheet(PDF) 5 Page - ON Semiconductor |
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NVD5802NT4G Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 7 page NTD5802N, NVD5802N http://onsemi.com 5 TYPICAL PERFORMANCE CHARACTERISTICS VSD, SOURCE−TO−DRAIN VOLTAGE (V) 1 10 100 1000 1 10 100 Figure 7. Capacitance Variation Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 9. Resistive Switching Time Variation vs. Gate Resistance RG, GATE RESISTANCE (W) Figure 10. Diode Forward Voltage vs. Current ID = 50 A TJ = 25°C VGS QDS VDD = 20 V ID = 50 A VGS = 10 V tr td(off) td(on) tf QGS QT VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) 0 1000 2000 3000 4000 5000 6000 7000 8000 10 5 0 5 10 152025 30 35 40 Ciss Coss Crss VGS = 0 V TJ = 25°C VDS VGS 0 3 6 9 12 15 020 40 60 80 0 6 12 18 24 30 VGS = 0 V TJ = 25°C 0.4 0.8 1.4 0.6 1.0 1.2 0 10 20 30 40 50 60 Figure 11. Maximum Rated Forward Biased Safe Operating Area VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.1 10 100 1000 0.1 10 100 10 ms 100 ms 1 ms 10 ms dc VGS = 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 1 1 |
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