NVD5802NT4G datasheet(5/7 Pages) ONSEMI

Part #	NVD5802NT4G

Description	Power MOSFET 40 V, Single N?묬hannel, 101 A DPAK

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Manufacturer	ONSEMI [ON Semiconductor]

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NTD5802N, NVD5802N

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5

TYPICAL PERFORMANCE CHARACTERISTICS

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

1

10

100

1000

1

10

100

Figure 7. Capacitance Variation

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

RG, GATE RESISTANCE (W)

Figure 10. Diode Forward Voltage vs. Current

ID = 50 A

TJ = 25°C

VGS

QDS

VDD = 20 V

ID = 50 A

VGS = 10 V

tr

td(off)

td(on)

tf

QGS

QT

VDS

GATE−TO−SOURCE OR DRAIN−TO−SOURCE

VOLTAGE (V)

0

1000

2000

3000

4000

5000

6000

7000

8000

10 5

0

5

10

152025

30

35 40

Ciss

Coss

Crss

VGS = 0 V

TJ = 25°C

VDS

VGS

0

3

6

9

12

15

020

40

60

80

0

6

12

18

24

30

VGS = 0 V

TJ = 25°C

0.4

0.8

1.4

0.6

1.0

1.2

0

10

20

30

40

50

60

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

0.1

10

100

1000

0.1

10

100

10 ms

100 ms

1 ms

10 ms

dc

VGS = 10 V

Single Pulse

TC = 25°C

RDS(on) Limit

Thermal Limit

Package Limit

1

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NVD5802NT4G Datasheet(PDF) 5 Page - ON Semiconductor

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