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3N100E Datasheet(PDF) 2 Page - Motorola, Inc

Part # 3N100E
Description  TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

3N100E Datasheet(HTML) 2 Page - Motorola, Inc

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MTP3N100E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
1000
1.23
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 1000 Vdc, VGS = 0 Vdc)
(VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
µAdc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
VGS(th)
2.0
3.0
6.0
4.0
Vdc
mV/
°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 1.5 Adc)
RDS(on)
2.96
4.0
Ohm
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 3.0 Adc)
(ID = 1.5 Adc, TJ = 125°C)
VDS(on)
4.97
12
10
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 1.5 Adc)
gFS
2.0
3.56
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
1316
1800
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
117
260
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
26
75
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD = 400 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
13
25
ns
Rise Time
(VDD = 400 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
tr
19
40
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 Ω)
td(off)
42
90
Fall Time
G = 9.1 Ω)
tf
33
55
Gate Charge
(See Figure 8)
(VDS = 400 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)
QT
32.5
45
nC
(See Figure 8)
(VDS = 400 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)
Q1
6.0
(VDS = 400 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)
Q2
14.6
Q3
13.5
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.794
0.63
1.1
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
trr
615
ns
(See Figure 14)
(IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
ta
104
(IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
tb
511
Reverse Recovery Stored Charge
QRR
2.92
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″ from package to center of die)
LD
3.5
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
7.5
nH
(1) Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.


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