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3N100E Datasheet(PDF) 2 Page - Motorola, Inc |
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3N100E Datasheet(HTML) 2 Page - Motorola, Inc |
2 / 8 page MTP3N100E 2 Motorola TMOS Power MOSFET Transistor Device Data ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) V(BR)DSS 1000 — — 1.23 — — Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = 1000 Vdc, VGS = 0 Vdc) (VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS — — — — 10 100 µAdc Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS — — 100 nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) VGS(th) 2.0 — 3.0 6.0 4.0 — Vdc mV/ °C Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 1.5 Adc) RDS(on) — 2.96 4.0 Ohm Drain–Source On–Voltage (VGS = 10 Vdc) (ID = 3.0 Adc) (ID = 1.5 Adc, TJ = 125°C) VDS(on) — — 4.97 — 12 10 Vdc Forward Transconductance (VDS = 15 Vdc, ID = 1.5 Adc) gFS 2.0 3.56 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss — 1316 1800 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss — 117 260 Reverse Transfer Capacitance f = 1.0 MHz) Crss — 26 75 SWITCHING CHARACTERISTICS (2) Turn–On Delay Time (VDD = 400 Vdc, ID = 3.0 Adc, VGS = 10 Vdc, RG = 9.1 Ω) td(on) — 13 25 ns Rise Time (VDD = 400 Vdc, ID = 3.0 Adc, VGS = 10 Vdc, RG = 9.1 Ω) tr — 19 40 Turn–Off Delay Time VGS = 10 Vdc, RG = 9.1 Ω) td(off) — 42 90 Fall Time G = 9.1 Ω) tf — 33 55 Gate Charge (See Figure 8) (VDS = 400 Vdc, ID = 3.0 Adc, VGS = 10 Vdc) QT — 32.5 45 nC (See Figure 8) (VDS = 400 Vdc, ID = 3.0 Adc, VGS = 10 Vdc) Q1 — 6.0 — (VDS = 400 Vdc, ID = 3.0 Adc, VGS = 10 Vdc) Q2 — 14.6 — Q3 — 13.5 — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (1) (IS = 3.0 Adc, VGS = 0 Vdc) (IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD — — 0.794 0.63 1.1 — Vdc Reverse Recovery Time (See Figure 14) (IS = 3.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) trr — 615 — ns (See Figure 14) (IS = 3.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) ta — 104 — (IS = 3.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) tb — 511 — Reverse Recovery Stored Charge QRR — 2.92 — µC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from the drain lead 0.25 ″ from package to center of die) LD — 3.5 4.5 — nH Internal Source Inductance (Measured from the source lead 0.25 ″ from package to source bond pad) LS — 7.5 — nH (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. |
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