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3185 Datasheet(PDF) 4 Page - Allegro MicroSystems

Part No. 3185
Description  HALL-EFFECT LATCHES FOR HIGH-TEMPERATURE OPERATION
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Maker  ALLEGRO [Allegro MicroSystems]
Homepage  http://www.allegromicro.com
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3185 Datasheet(HTML) 4 Page - Allegro MicroSystems

   
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3185 THRU 3189
HALL-EFFECT LATCHES
FOR HIGH-TEMPERATURE
OPERATION
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
SENSOR LOCATIONS
(
±0.005” [0.13 mm] die placement)
Package Designators “LT”
1
3
2
Dwg. MH-008-4B
0.030"
0.76 mm
NOM
ACTIVE AREA DEPTH
0.050"
1.27 mm
0.090"
2.27 mm
A
Package Designator “U”
1
3
2
Dwg. MH-002-7B
0.015"
0.38 mm
NOM
BRANDED
SURFACE
ACTIVE AREA DEPTH
0.077"
1.96 mm
0.092"
2.33 mm
A
Package Designators “UA” and "UA-TL"
1
3
2
Dwg. MH-011-4B
0.018"
0.46 mm
NOM
BRANDED
SURFACE
ACTIVE AREA DEPTH
0.083"
2.10 mm
0.060"
1.51 mm
A
The simplest form of magnet that will operate these devices is a ring
magnet, as shown below. Other methods of operation are possible.
Dwg. A-11,899
OPERATION
In operation, the output transistor is OFF until the strength of the mag-
netic field perpendicular to the surface of the chip exceeds the threshold or
operate point (BOP). When the field strength exceeds BOP, the output transis-
tor switches ON and is capable of sinking 25 mA of current.
The output transistor switches OFF when magnetic field reversal results
in a magnetic flux density below the OFF threshold (BRP). This is illustrated
in the transfer characteristics graph (A3187* shown).
Note that the device latches; that is, a south pole of sufficient strength
will turn the device ON. Removal of the south pole will leave the device ON.
The presence of a north pole of sufficient strength is required to turn the
device OFF.
APPLICATIONS INFORMATION
Extensive applications information on magnets and Hall-effect sensors is
also available in the Allegro Integrated and Discrete Semiconductors Data
Book or Application Note 27701.
30 V
MAX
0+B
0
FLUX DENSITY
Dwg. GH-034-4
-B
RP
B
VOUT(SAT)
BB
V
OP
B
Although sensor location is accurate to three
sigma for a particular design, product improve-
ments may result in small changes to sensor
location.


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