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MTP36N06V Datasheet(PDF) 2 Page - Motorola, Inc

Part # MTP36N06V
Description  TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on) = 0.04 OHM
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MTP36N06V Datasheet(HTML) 2 Page - Motorola, Inc

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MTP36N06V
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
61
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150 °C)
IDSS
10
100
µAdc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
2.6
6.0
4.0
Vdc
mV/
°C
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 16 Adc)
RDS(on)
0.034
0.04
Ohm
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 32 Adc)
(VGS = 10 Vdc, ID = 16 Adc, TJ = 150 °C)
VDS(on)
1.25
1.54
1.47
Vdc
Forward Transconductance (VDS = 7.6 Vdc, ID = 16 Adc)
gFS
5.0
7.83
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
1220
1700
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
337
470
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
74.8
150
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD = 30 Vdc, ID = 32 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
14
30
ns
Rise Time
(VDD = 30 Vdc, ID = 32 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
tr
138
270
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 Ω)
td(off)
54
100
Fall Time
G = 9.1 Ω)
tf
91
180
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 32 Adc,
VGS = 10 Vdc)
QT
39
50
nC
(See Figure 8)
(VDS = 48 Vdc, ID = 32 Adc,
VGS = 10 Vdc)
Q1
7.0
(VDS = 48 Vdc, ID = 32 Adc,
VGS = 10 Vdc)
Q2
17
Q3
13
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 32 Adc, VGS = 0 Vdc)
(IS = 32 Adc, VGS = 0 Vdc, TJ = 150 °C)
VSD
1.03
0.94
2.0
Vdc
Reverse Recovery Time
(IS = 32 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
trr
92
ns
(IS = 32 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
ta
64
(IS = 32 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
tb
28
Reverse Recovery Stored Charge
QRR
0.332
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
3.5
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
7.5
nH
(1) Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.


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