M1MA152KT1G datasheet(2/3 Pages) ONSEMI

Part #	M1MA152KT1G

Description	Single Silicon Switching Diodes

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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M1MA151KT1, M1MA152KT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristic

Symbol

Condition

Min

Max

Unit

Reverse Voltage Leakage Current

M1MA151KT1

IR

VR = 35 V

−

0.1

mAdc

M1MA152KT1

VR = 75 V

−

0.1

Forward Voltage

VF

IF = 100 mA

−

1.2

Vdc

Reverse Breakdown Voltage

M1MA151KT1

VR

IR = 100 mA

40

−

Vdc

M1MA152KT1

80

−

Diode Capacitance

CD

VR = 0, f = 1.0 MHz

−

2.0

pF

Reverse Recovery Time (Figure 1)

trr (Note 2)

IF = 10 mA, VR = 6.0 V,

RL = 100 W, Irr = 0.1 IR

−

3.0

ns

2. trr Test Circuit

A

RL

tr

tp

t

10%

90%

VR

tp = 2 ms

tr = 0.35 ns

IF

trr

t

Irr = 0.1 IR

IF = 10 mA

VR = 6 V

RL = 100 W

RECOVERY TIME EQUIVALENT TEST CIRCUIT

INPUT PULSE

OUTPUT PULSE

Figure 1. Reverse Recovery Time Equivalent Test Circuit

ORDERING INFORMATION

Device

Package

Shipping†

M1MA151KT1

SC−59

3000 Units / Tape & Reel

M1MA151KT1G

SC−59

(Pb−Free)

3000 Units / Tape & Reel

M1MA152KT1

SC−59

3000 Units / Tape & Reel

M1MA152KT1G

SC−59

(Pb−Free)

3000 Units / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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M1MA152KT1G Datasheet(PDF) 2 Page - ON Semiconductor

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