NJVMJD42CRLG datasheet(2/7 Pages) ONSEMI

Part #	NJVMJD42CRLG

Description	Complementary Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MJD41C (NPN), MJD42C (PNP)

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THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

6.25

°C/W

Thermal Resistance, Junction−to−Ambient (Note 2)

RqJA

71.4

°C/W

2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 3)

(IC = 30 mAdc, IB = 0)

VCEO(sus)

100

−

Vdc

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0)

ICEO

−

50

mAdc

Collector Cutoff Current

(VCE = 100 Vdc, VEB = 0)

ICES

−

10

mAdc

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

IEBO

−

0.5

mAdc

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 0.3 Adc, VCE = 4 Vdc)

(IC = 3 Adc, VCE = 4 Vdc)

hFE

30

15

−

75

−

Collector−Emitter Saturation Voltage

(IC = 6 Adc, IB = 600 mAdc)

VCE(sat)

−

1.5

Vdc

Base−Emitter On Voltage

(IC = 6 Adc, VCE = 4 Vdc)

VBE(on)

−

2

Vdc

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 4)

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)

fT

3

−

MHz

Small−Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)

hfe

20

−

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

4. fT = ⎪hfe⎪• ftest.

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