2SA1160 datasheet(1/1 Pages) WINNERJOIN

Part #	2SA1160

Description	TRANSISTOR (PNP)

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Manufacturer	WINNERJOIN [SHENZHEN YONGERJIA INDUSTRY CO.,LTD]

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WEJ

ELECTRONIC

CO.,LTD

2SA1160 TRANSISTOR (PNP)

FEATURE

Power dissipation

PCM : 0.9 W (Tamb=25

℃)

Collector current

ICM: -2A

Collector-base voltage

V(BR)CBO: -20 V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= -1mA , IE=0

-20

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-10mA , IB=0

-10

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -1mA, IC=0

-6

V

Collector cut-off current

ICBO

VCB= -20 V, IE=0

-0.1

µA

Emitter cut-off current

IEBO

VEB= -6 V, IC=0

-0.1

µA

hFE(1)

VCE=-1V, IC= -0.5A

140

600

DC current gain

hFE(2)

VCE=-1V, IC= -4A

60

Collector-emitter saturation voltage

VCE(sat)

IC= -2A, IB=-50mA

-0.2

-0.5

V

Transition frequency

fT

VCE=-1V, IC= -0.5A

140

MHz

Output capacitance

Cob

VCE=-10V, IE=0,f=1 MHz

50

pF

CLASSIFICATION OF hFE

Rank

A

B

C

Range

140-280

200-400

300-600

TO-92MOD

1. EMITTER

2. COLLECTOR

3. BASE

123

2SA1160

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

RoHS

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