SQJ461EP datasheet(4/7 Pages) VISHAY

Part #	SQJ461EP

Description	Automotive P-Channel 60 V (D-S) 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQJ461EP

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Vishay Siliconix

S11-2288-Rev. E, 28-Nov-11

4

Document Number: 65541

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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Source Drain Diode Forward Voltage

Threshold Voltage

Breakdown Voltage vs. Junction Temperature

0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

0

25

50

75

100

125

150

175

ID = 14.4 A

VGS =10V

TJ - Junction Temperature (°C)

0.00

0.02

0.04

0.06

0.08

0.10

02

4

6

8

10

TJ = 25 °C

TJ = 150 °C

VGS - Gate-to-Source Voltage (V)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1

0.01

0.001

0.1

10

100

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

- 0.4

- 0.1

0.2

0.5

0.8

1.1

- 50

- 25

0

25

50

75

100

125

150

175

ID = 250 µA

ID =1 mA

TJ - Temperature (°C)

- 75

- 72

- 69

- 66

- 63

- 60

- 50

- 25

0

25

50

75

100

125

150

175

ID =1mA

TJ - Junction Temperature (°C)

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