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FYP2010DNTU Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part # FYP2010DNTU
Description  Schottky Barrier Rectifier
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FYP2010DNTU Datasheet(HTML) 1 Page - Fairchild Semiconductor

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© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FYP2010DN Rev. B1
1
August 2009
FYP2010DN
Schottky Barrier Rectifier
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
Absolute Maximum Ratings T
A=25°C unless otherwise noted
Thermal Characteristics
Electrical Characteristics (per diode)
* Pulse Test: Pulse Width=300
μs, Duty Cycle=2%
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage
100
V
VR
Maximum DC Reverse Voltage
100
V
IF(AV)
Average Rectified Forward Current
@ TC = 120°C20
A
IFSM
Non-repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
150
A
TJ, TSTG
Operating Junction and Storage Temperature
-65 to +150
°C
Symbol
Parameter
Value
Units
RθJC
Maximum Thermal Resistance, Junction to Case (per diode)
1.7
°C/W
Symbol
Parameter
Value
Units
VFM *
Maximum Instantaneous Forward Voltage
IF = 10A
IF = 10A
IF = 20A
IF = 20A
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
0.77
0.65
-
0.75
V
IRM *
Maximum Instantaneous Reverse Current
@ rated VR
TC = 25 °C
TC = 125 °C
0.1
20
mA
3.Anode
1.Anode
2. Cathode
TO-220
1 2 3


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