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2N2907AHR Datasheet(PDF) 10 Page - STMicroelectronics

Part No. 2N2907AHR
Description  Hi-Rel 60 V, 0.6 A PNP transistor
Download  21 Pages
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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2N2907AHR Datasheet(HTML) 10 Page - STMicroelectronics

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Radiation hardness assurance
2N2907AHR
10/21
DocID15382 Rev 6
ESCC radiation assurance
Each product lot is tested according to the ESCC basic specification 22900, with a minimum
of 11 samples per diffusion lot and 5 samples per wafer, one sample being kept as
unirradiated sample, all of them being fully compliant with the applicable ESCC generic
and/or detailed specification.
ST goes beyond the ESCC specification by performing the following procedure:
Test of 11 pieces by wafer, 5 biased at least 80% of V
(BR)CEO
, 5 unbiased and 1
kept for reference
Irradiation at 0.1 rad (Si)/s
Acceptance criteria of each individual wafer if as 100 krad guaranteed if all 10
samples comply with the post radiation electrical characteristics provided in
Table 8.
Delivery together with the parts of the radiation verification test (RVT) report of the particular
wafer used to manufacture the products. This RVT includes the value of each parameter at
30, 50, 70 and 100 krad (Si) and after 24 hour annealing at room temperature and after an
additional 168 hour annealing at 100°C.
Table 7. Radiation summary
Radiation test
100 krad “SW”
100 krad ESCC
Wafer test
each
each
Part tested
5 biased
5 biased + 5 unbiased
Dose rate
0.1 rad/s
0.1 rad/s
Acceptance
Fixed values
(1)
1.
Part numbers with suffix "SW" have same pre and post irradiation electrical characteristics.
Part number with suffix "SW35" have specific post irradiation electrical characteristics.
MIL-STD-750 method 1019
Displacement damage
Optional
Optional
Agency part number (ex)
5202/001/04
(2)
2.
Example of the 2N2907A in LCC-3 Gold finish.
5202/001/04R
(2)
ST part number (ex)
SOC2N2907ASW35
(1)
SOC2N2907ARHRG
Documents
CoC + RVT
CoC + RVT


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