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2N2907AHR Datasheet(PDF) 9 Page - STMicroelectronics

Part No. 2N2907AHR
Description  Hi-Rel 60 V, 0.6 A PNP transistor
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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2N2907AHR Datasheet(HTML) 9 Page - STMicroelectronics

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DocID15382 Rev 6
9/21
2N2907AHR
Radiation hardness assurance
21
3
Radiation hardness assurance(b)
The products guaranteed in radiation within the JANS system fully comply with the MIL-
PRF-19500/291 specification.
The products guaranteed in radiation within the ESCC system fully comply with the ESCC
5202/001 and ESCC 22900 specifications.
JANS radiation assurance
ST JANS parts guaranteed at 100 krad (Si), tested, in full compliancy with the MIL-PRF-
19500 specification, specifically the Group D, subgroup 2 inspection, between 50 and 300
rad/s.
A brief summary is provided below:
All test are performed in accordance to MIL-PRF-19500 and test method
1019 of
MIL-STD-750 for total Ionizing dose.
Each wafer of each lot is tested. The table below provides for each monitored parameters of
the test conditions and the acceptance criteria
b.
For PNP type, voltage and current values are negative.
Table 6. MIL-PRF-19500 (test method 1019) post radiation electrical characteristics
Symbol
Parameter
Test conditions
Value
Unit
Min.
Max.
I
CBO
Collector to base
cutoff current
V
CB
= 60
20
μA
V
CB
= 50 V
20
nA
I
EBO
Emitter to base
cutoff current
V
EB
= 5 V
20
μA
V
EB
= 4 V
100
nA
V
(BR)CEO
Breakdown voltage,
collector to emitter
I
C
= 10 mA
60
V
I
CES
Collector to emitter
cutoff current
V
CE
= 50 V
100
nA
h
FE
Forward-current
transfer ratio
V
CE
= 10 V; I
C
= 0.1 mA
[37.5]
(1)
1.
See method 1019 of MIL-STD-750 for how to determine [h
FE
] by first calculating the delta (1/h
FE
) from the
pre- and Post-radiation h
FE
. Notice the [h
FE
] is not the same as h
FE
and cannot be measured directly. The
[h
FE
] value can never exceed the pre-radiation minimum h
FE
that it is based upon.
V
CE
= 10 V; I
C
= 1.0 mA
[50]
(1)
400
V
CE
= 10 V; I
C
= 10 mA
[50]
(1)
V
CE
= 10 V; I
C
= 150 mA
[50]
(1)
300
V
CE
= 10 V; I
C
= 500 mA
[25]
(1)
V
CE(sat)
Collector-emitter
saturation voltage
I
C
= 150 mA; I
B
= 15 mA
0.46
V
I
C
= 500 mA; I
B
= 50 mA
1.84
V
BE(sat)
Base-emitter
saturation voltage
I
C
= 150 mA; I
B
= 15 mA
0.6
1.5
V
I
C
= 500 mA; I
B
= 50 mA
3


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