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2SC2882 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SC2882
Description  Power Amplifier Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC2882 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SC2882
2009-12-21
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 80 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
80
V
hFE (1)
(Note 3)
IE = 2 mA, IC = 50 mA
70
240
DC current gain
hFE (2)
VCE = 2 V, IC = 200 mA
40
Collector-emitter saturation voltage
VCE (sat)
IC = 200 mA, IB = 20 mA
0.4
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 5 mA
0.55
0.8
V
Transition frequency
fT
VCE = 10 V, IC = 10 mA
100
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
10
pF
Note 3: hFE(1) classification O: 70 to 140, Y: 120 to 240
Marking
Note 4: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
E
Part No. (or abbreviation code)
Lot No.
Note 4
Characteristics indicator


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