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MTP1N80E Datasheet(PDF) 2 Page - Motorola, Inc |
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MTP1N80E Datasheet(HTML) 2 Page - Motorola, Inc |
2 / 8 page MTP1N80E 2 Motorola TMOS Power MOSFET Transistor Device Data ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS 800 — — 0.981 — — Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = 800 Vdc, VGS = 0 Vdc) (VDS = 800 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS — — — — 10 100 µAdc Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS — — 100 nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) VGS(th) 2.0 — 3.3 6.3 4.0 — Vdc mV/ °C Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 0.5 Adc) RDS(on) — 10.3 12 Ohm Drain–to–Source On–Voltage (VGS = 10 Vdc, ID = 1.0 Adc) (VGS = 10 Vdc, ID = 0.5 Adc, TJ = 125°C) VDS(on) — — 11 — 14.4 12.6 Vdc Forward Transconductance (VDS = 15 Vdc, ID = 0.5 Adc) gFS 0.4 1.4 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss — 297 420 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss — 29 40 Reverse Transfer Capacitance f = 1.0 MHz) Crss — 6.0 10 SWITCHING CHARACTERISTICS (2) Turn–On Delay Time (VDD = 400 Vdc, ID = 1.0 Adc, VGS = 10 Vdc, RG = 9.1 Ω) td(on) — 9.0 20 ns Rise Time (VDD = 400 Vdc, ID = 1.0 Adc, VGS = 10 Vdc, RG = 9.1 Ω) tr — 10 20 Turn–Off Delay Time VGS = 10 Vdc, RG = 9.1 Ω) td(off) — 20 40 Fall Time G = 9.1 Ω) tf — 27 50 Gate Charge (VDS = 400 Vdc, ID = 1.0 Adc, VGS = 10 Vdc) QT — 9.6 14 nC (VDS = 400 Vdc, ID = 1.0 Adc, VGS = 10 Vdc) Q1 — 2.1 — (VDS = 400 Vdc, ID = 1.0 Adc, VGS = 10 Vdc) Q2 — 4.2 — Q3 — 4.7 — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (1) (IS = 1.0 Adc, VGS = 0 Vdc) (IS = 1.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD — — 0.82 0.7 1.2 — Vdc Reverse Recovery Time (IS = 1.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) trr — 317 — ns (IS = 1.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) ta — 56 — (IS = 1.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) tb — 261 — Reverse Recovery Stored Charge QRR — 0.98 — µC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from the drain lead 0.25 ″ from package to center of die) LD — — 3.5 4.5 — — nH Internal Source Inductance (Measured from the source lead 0.25 ″ from package to source bond pad) LS — 7.5 — nH (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. |
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