HGTG10N120BN datasheet(2/8 Pages) FAIRCHILD

Part #	HGTG10N120BN

Description	35A, 1200V, NPT Series N-Channel IGBT

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

HGTG10N120BN

HGTP10N120BN

HGT1S10N120BNS

UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES

1200

V

Collector Current Continuous

At TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C25

35

A

At TC = 110

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C110

17

A

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM

80

A

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES

±20

V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM

±30

V

Switching Safe Operating Area at TJ = 150

oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA

55A at 1200V

Power Dissipation Total at TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

298

W

Power Dissipation Derating TC > 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2.38

W/oC

Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV

80

mJ

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

300

260

oC

Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC

8

µs

Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC

15

µs

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1. Pulse width limited by maximum junction temperature.

2. ICE = 20A, L = 400µH, TJ = 25

oC.

3. VCE(PK) = 840V, TJ = 125

oC, R

G = 10Ω.

Electrical Specifications

TC = 25

oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Collector to Emitter Breakdown Voltage

BVCES

IC = 250µA, VGE = 0V

1200

-

V

Emitter to Collector Breakdown Voltage

BVECS

IC = 10mA, VGE = 0V

15

-

V

Collector to Emitter Leakage Current

ICES

VCE = 1200V

TC = 25

oC

-

250

µA

TC = 125

oC

-

150

-

µA

TC = 150

oC-

-

2

mA

Collector to Emitter Saturation Voltage

VCE(SAT)

IC = 10A,

VGE = 15V

TC = 25

oC

-

2.45

2.7

V

TC = 150

oC-

3.7

4.2

V

Gate to Emitter Threshold Voltage

VGE(TH)

IC = 90µA, VCE = VGE

6.0

6.8

-

V

Gate to Emitter Leakage Current

IGES

VGE = ±20V

-

±250

nA

Switching SOA

SSOA

TJ = 150

oC, R

G = 10Ω, VGE = 15V,

L = 400

µH, VCE(PK) = 1200V

55

-

A

Gate to Emitter Plateau Voltage

VGEP

IC = 10A, VCE = 600V

-

10.4

-

V

On-State Gate Charge

QG(ON)

IC = 10A,

VCE = 600V

VGE = 15V

-

100

120

nC

VGE = 20V

-

130

150

nC

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