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SI4884BDY-T1-E3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI4884BDY-T1-E3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Vishay Siliconix Si4884BDY Document Number: 73454 S09-0228-Rev. C, 09-Feb-09 www.vishay.com 1 N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs • PWM Optimized PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) 30 0.0090 at VGS = 10 V 16.5 10.5 nC 0.012 at VGS = 4.5 V 13.2 SO-8 SD SD SD GD 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4884BDY-T1-E3 (Lead (Pb)-free) Si4884BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G D S Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 16.5 A TC = 70 °C 13.2 TA = 25 °C 12.4b, c TA = 70 °C 10.0b, c Pulsed Drain Current IDM 50 Continuous Source-Drain Diode Current TC = 25 °C IS 4.0 TA = 25 °C 2.3b, c Single Pulse Avalanche Current L = 0.1 mH IAS 15 Avalanche Energy EAS 11 mJ Maximum Power Dissipation TC = 25 °C PD 4.45 W TC = 70 °C 2.85 TA = 25 °C 2.50b, c TA = 70 °C 1.6b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 40 50 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 22 28 |
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