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CMZB150 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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CMZB150 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page CMZB68~CMZB390 2011-06-20 1 TOSHIBA Zener Diode Silicon Junction CMZB68~CMZB390 ○ Communication, Control and Measurement Equipment ○ Constant Voltage Regulation • Power dissipation: P = 1.0 W • Zener voltage: VZ = 68 to 390 V • Suitable for high-density board assembly due to the use of a small surface-mount package, M−FLATTM Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Power dissipation P 1.0 (Note 1) W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature / current / voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ta = 40°C Device mounted on a glass-epoxy board Board size: 50 mm × 50 mm Land pattern: 6 mm × 6 mm Board thickness: 1.6 mm Land pattern dimensions for reference only Unit: mm ① ANODE ② CATHODE 0.16 1.75 ± 0.1 + 0.2 − 0.1 2.4 ① ② JEDEC ― JEITA ― TOSHIBA 3-4E1A Weight: 0.023 g (typ.) 3.0 1.4 Unit: mm 1.4 |
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