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2SA1941-R Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SA1941-R
Description  Power Amplifier Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA1941-R Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SA1941
2010-11-02
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −140 V, IE = 0
−5.0
μA
Emitter cut-off current
IEBO
VEB = −5 V, IC = 0
−5.0
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = −50 mA, IB = 0
−140
V
hFE (1)
(Note)
VCE = −5 V, IC = −1 A
55
160
DC current gain
hFE (2)
VCE = −5 V, IC = −5 A
35
83
Collector-emitter saturation voltage
VCE (sat)
IC = −7 A, IB = −0.7 A
−0.8
−2.0
V
Base-emitter voltage
VBE
VCE = −5 V, IC = −5 A
−1.0
−1.5
V
Transition frequency
fT
VCE = −5 V, IC = −1 A
30
MHz
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
320
pF
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Marking
A1941
TOSHIBA
Lot No.
Characteristics
indicator
NOTE 2
Part No. (or abbreviation code)
Note 2 : A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.


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