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AS6C4008-55TIN Datasheet(PDF) 8 Page - Alliance Semiconductor Corporation

Part No. AS6C4008-55TIN
Description  512K X 8 BIT LOW POWER 512K X 8 BIT LOW POWER CMOS SRAM
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Maker  ALSC [Alliance Semiconductor Corporation]
Homepage  http://www.alsc.com
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AS6C4008-55TIN Datasheet(HTML) 8 Page - Alliance Semiconductor Corporation

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DATA RETENTION CHARACTERISTICS
PARAMETER
SYMBOL TEST CONDITION
MIN.
TYP.
MAX.
UNIT
VCC for Data Retention
VDR
CE#
V
CC
- 0.2V
2.0
-
5.5
V
**C
-
2
30
µ
Data Retention Current
DR
VCC = 2.0V
CE#
V
CC
- 0.2V **I
-
2
30
µA
Chip Disable to Data
Retention Time
tCDR
See Data Retention
Waveforms (below)
0
-
-
ns
Recovery Time
tR
tRC*
-
-
ns
tRC* = Read Cycle Time **C=Commercial temperature/I=Industrial temperature
DATA RETENTION WAVEFORM
Vcc
CE#
VDR ≧ 2.0V
CE#
V
cc-0.2V
Vcc(min.)
VIH
tR
tCDR
VIH
Vcc(min.)
®
I
512K X 8 BIT LOW POWER CMOS SRAM
OCTOBER 2007
AS6C4008
10/OCTOBER/07, V.1.1
Alliance Memory Inc.
Page 8 of 15


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