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IXDN502SIA Datasheet(PDF) 3 Page - IXYS Corporation |
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IXDN502SIA Datasheet(HTML) 3 Page - IXYS Corporation |
3 / 12 page 3 IXDF502 / IXDI502 / IXDN502 Unless otherwise noted, 4.5V ≤ V CC ≤ 30V . All voltage measurements with respect to GND. IXD_502 configured as described in Test Conditions. All specifications are for one channel. Electrical Characteristics @ T A = 25 oC (3) Symbol Parameter Test Conditions Min Typ Max Units VIH High input voltage 4.5V ≤ VCC ≤ 18V 3.0 V VIL Low input voltage 4.5V ≤ VCC ≤ 18V 0.8 V VIN Input voltage range -5 VCC + 0.3 V IIN Input current 0V ≤ VIN ≤ VCC -10 10 µA VOH High output voltage VCC - 0.025 V VOL Low output voltage 0.025 V ROH High state output resistance VCC = 15V 2.5 4 Ω ROL Low state output resistance VCC = 15V 2 3 Ω IPEAK Peak output current VCC = 15V 2 A IDC Continuous output current 1 A tR Rise time CLOAD =1000pF VCC =15V 7.5 10 ns tF Fall time CLOAD =1000pF VCC =15V 6.5 9 ns tONDLY On-time propagation delay CLOAD =1000pF VCC =15V 25 32 ns tOFFDLY Off-time propagation delay CLOAD =1000pF VCC =15V 20 30 ns VCC Power supply voltage 4.5 15 30 V ICC Power supply current VIN = 3.5V VIN = 0V VIN = +VCC 1 0 3 15 15 mA µA µA Absolute Maximum Ratings (1) Operating Ratings (2) Parameter Value Supply Voltage 35V All Other Pins -0.3 V to V CC + 0.3V Junction Temperature 150 °C Storage Temperature -65 °C to 150 °C Lead Temperature (10 Sec) 300 °C Parameter Value Operating Supply Voltage 4.5V to 30V Operating Temperature Range -55 °C to 125 °C (4) IXYS reserves the right to change limits, test conditions, and dimensions. Package Thermal Resistance * 8-PinPDIP (PI) θ J-A (typ) 125 °C/W 8-PinSOIC (SIA) θ J-A(typ) 200 °C/W 6-LeadDFN (D1) θ J-A(typ) 125-200 °C/W 6-LeadDFN (D1) θ J-C(max) 3.3 °C/W 6-LeadDFN (D1) θ J-S(typ) 7.3 °C/W |
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